✦ LIBER ✦

Single atomic steps on SiC polished surfaces

✍ Scribed by P. Vicente; D. Chaussende

Publisher: Elsevier Science
Year: 2002
Tongue: English
Weight: 201 KB
Volume: 15
Category: Article
ISSN: 0961-1290
DOI: 10.1016/s0961-1290(02)85150-x

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✦ Synopsis

On-axis 4H-SiC and 6H-SiC are very promismismatch between GaN and Sic combined D. Chaussende ing material for respectively electronics with a high thermal conductivity makes 6H-NOVASiC, Savoie Technolac, and optoelectronics applications. Compared SK a good substrate for the growth of Group BP267,73375 Le Bourget du to GaN and sapphire, the reduced lattice Ill-nitride epitaxial layers [l]. Lac Cddex (France).

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