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Simultaneous impurity doping with Zn and Se in AlGaInP by MOVPE

✍ Scribed by C. Anayama; H. Sekiguchi; M. Kondo; K. Domen; T. Tanahashi

Book ID
112817892
Publisher
Springer US
Year
1993
Tongue
English
Weight
642 KB
Volume
22
Category
Article
ISSN
0361-5235

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ZnS p-n homo junctions have been obtained for the first time with epitaxially grown layers having the structures of n-ZnS : In/p-ZnS : In, Ag, N/p-GaAs and p-ZnS : In, Ag, N/n-ZnS : In/n-GaAs. Both of these structures showed rectifying behavior which is expected for p-n junctions. The forward voltag