## Abstract The performance of III‐nitride based high‐power light emitting diodes (LEDs) is reviewed. Direct color high‐power LEDs with 1 × 1 mm^2^ chip size in commercial LUXEON^®^ Rebel packages are shown to exhibit external quantum efficiencies at a drive current of 350 mA ranging from ∼60% at a
Simulation of visible and ultra-violet group-III nitride light emitting diodes
✍ Scribed by K.A. Bulashevich; V.F. Mymrin; S.Yu. Karpov; I.A. Zhmakin; A.I. Zhmakin
- Book ID
- 108164005
- Publisher
- Elsevier Science
- Year
- 2006
- Tongue
- English
- Weight
- 670 KB
- Volume
- 213
- Category
- Article
- ISSN
- 0021-9991
No coin nor oath required. For personal study only.
📜 SIMILAR VOLUMES
## Abstract Using simulations, we have analysed basic mechanisms of hybrid II–O/III–N light‐emitting diode operation. Factors largely affecting the internal quantum efficiency of hybrid single‐ and double heterostructures, including operation temperature, are examined in detail. (© 2007 WILEY‐VCH V
## Abstract The junction temperature rise of light emitting diodes due to self‐heating effects during operation of the LED is measured using the electro‐luminescence of the band‐to‐band recombination. This method is useful for the junction temperature monitoring of small geometry devices, indirectl