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Simulation of the capacitance-voltage characteristics of a ferroelectric material

✍ Scribed by L. S. Berman

Book ID
110144787
Publisher
Springer
Year
2005
Tongue
English
Weight
49 KB
Volume
39
Category
Article
ISSN
1063-7826

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Theoretical studies of the capacitance-voltage characteristics of metal-ferroelectric-GaN structures
✍ Jinzhi Ran; Jianhong Yang; Xueyuan Cai 📂 Article 📅 2011 🏛 John Wiley and Sons 🌐 English ⚖ 143 KB

## SUMMARY We have simulated the capacitance versus voltage characteristics (C‐V) of metal‐ferroelectric‐gallium nitride (GaN metal‐ferroelectric‐semiconductor) structures and found useful design rules for improving the devices' performance. The thickness effects of ferroelectric film on the C‐V ar