We have fabricated a single quantum dot in the two-dimensional electron gas of a free-standing GaAs/AlGaAs heterostructure. Standard processing techniques are used to define the dot on a narrow mesa and selective etching undercuts the device to form a 120 nm thick free-standing beam connected to the
β¦ LIBER β¦
Simulation of single-electron transport in nanostructured quantum dots
β Scribed by Babiker, S.
- Book ID
- 114617713
- Publisher
- IEEE
- Year
- 2005
- Tongue
- English
- Weight
- 250 KB
- Volume
- 52
- Category
- Article
- ISSN
- 0018-9383
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
Single electron transport in a free-stan
β
S.J. Chorley; C.G. Smith; F. Perez-Martinez; J. Prance; P. Atkinson; D.A. Ritchi
π
Article
π
2008
π
Elsevier Science
π
English
β 469 KB
Self-consistent analysis of single-elect
β
Jovanovic, Dejan; Leburton, Jean-Pierre
π
Article
π
1994
π
The American Physical Society
π
English
β 757 KB
Single-electron transport in nanostructu
β
J.R. Barker; S. Babiker; S. Roy
π
Article
π
1996
π
Elsevier Science
π
English
β 320 KB
Single electron charging effects in semi
β
L. P. Kouwenhoven; N. C. van der Vaart; A. T. Johnson; W. Kool; C. J. P. M. Harm
π
Article
π
1991
π
Springer
π
English
β 864 KB
Single-electron quantum dots in silicon
β
M. Khoury; A. Gunther; S. MiliΔiΔ; J. Rack; S.M. Goodnick; D. Vasileska; T.J. Th
π
Article
π
2000
π
Springer
π
English
β 238 KB
Single electron charging in parallel cou
β
A.S. Adourian; C. Livermore; R.M. Westervelt; K.L. Campman; A.C. Gossard
π
Article
π
1996
π
Elsevier Science
π
English
β 361 KB
We report low-temperature conductance measurements in the Coulomb blockade regime on two nominally identical tunnel-coupled quantum dots in parallel defined electrostatically in the two-dimensional electron gas of a GaAs/AlGaAs heterostructure. At low interdot tunnel coupling we find that the conduc