Hysteresis in the current-voltage curve of a resonant tunneling diode is simulated and analyzed in the quantum hydrodynamic (OHD) model for semiconductor devices. The simulations are the first to show hysteresis in the QHD equations and to confirm that bistability is an intrinsic property of the res
β¦ LIBER β¦
Simulation of resonant tunneling diodes with a generalized quantum transport theory
β Scribed by M. Ogawa; T. Sugano; T. Miyoshi
- Publisher
- Elsevier Science
- Year
- 1999
- Tongue
- English
- Weight
- 369 KB
- Volume
- 47
- Category
- Article
- ISSN
- 0167-9317
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β¦ Synopsis
Modeling of quantum transport based on the non-equilibrium Green functions is presented in resonant tunneling diodes (RTD's) where realistic band structures, space charge effect, and scattering effects are taken into account. We have developed a multiband, non-equilibrium Green function and Poisson simulator that employs multi-band (MB) tight binding calculation using a sp3s* hybridization.
As a result, we have found that the multiband nature and polar optical phonon scattering effects significantly change the results of conventional RTD simulations.
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