For the analysis and design of semiconductor intersubband devices, accurate values for the Fermi energy and the subband electron population are needed. The effect of the positiondependent electron effective mass m \* (z) is commonly neglected in the determination of these two intersubband device par
β¦ LIBER β¦
Simulation of quantum transport in quantum devices with spatially varying effective mass
β Scribed by Tsuchiya, H.; Ogawa, M.; Miyoshi, T.
- Book ID
- 114537948
- Publisher
- IEEE
- Year
- 1991
- Tongue
- English
- Weight
- 657 KB
- Volume
- 38
- Category
- Article
- ISSN
- 0018-9383
- DOI
- 10.1109/16.81613
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