Quantum effects play an important role in determining the double-gate (DG) MOSFETs characteristics. The non-equilibrium Green's function formalism (NEGF) in real-space (RS) representation provides a rigorous description of quantum transport in nanoscale devices. Unfortunately, the traditional NEGF f
β¦ LIBER β¦
High-Order Element Effects of the Green's Function in Quantum Transport Simulation of Nanoscale Devices
β Scribed by Hao Wang; Gaofeng Wang; Sheng Chang; Qijun Huang
- Book ID
- 114619820
- Publisher
- IEEE
- Year
- 2009
- Tongue
- English
- Weight
- 813 KB
- Volume
- 56
- Category
- Article
- ISSN
- 0018-9383
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
Simulation of quantum transport in doubl
β
Yasser M. Sabry; Tarek M. Abdolkader; Wael F. Farouk
π
Article
π
2010
π
John Wiley and Sons
π
English
β 313 KB
A theoretical study of atomistic effects
β
John R. Barker
π
Article
π
2003
π
Elsevier Science
π
English
β 832 KB
Recent developments in silicon MOSFET nanoelectronics point the way to devices having channel dimensions in the range down to a few nm. At these atomistic scales only a ΓΏnite number of impurities occur in the device volume and it is demonstrated that the Kohn-Luttinger self-averaging ansatz and cons