A theoretical study of atomistic effects on the quantum hydrodynamics of carriers in decanano semiconductor devices using non-self-averaged Green functions
✍ Scribed by John R. Barker
- Publisher
- Elsevier Science
- Year
- 2003
- Tongue
- English
- Weight
- 832 KB
- Volume
- 19
- Category
- Article
- ISSN
- 1386-9477
No coin nor oath required. For personal study only.
✦ Synopsis
Recent developments in silicon MOSFET nanoelectronics point the way to devices having channel dimensions in the range down to a few nm. At these atomistic scales only a ÿnite number of impurities occur in the device volume and it is demonstrated that the Kohn-Luttinger self-averaging ansatz and consequently standard Green function perturbation theory must fail. A non-self-averaged T -matrix approach is instead proposed for a model system of randomly distributed hard sphere potentials which utilises the interference between the non-asymptotic exact partial-wave scattering from each impurity using the method of images to build in the e ects of conÿnement by the device boundaries. The quantum hydrodynamic representation is used to discuss the resulting current ows through the model device.