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Simulation of Heavily Irradiated Silicon Pixel Sensors and Comparison With Test Beam Measurements

✍ Scribed by Chiochia, V.; Swartz, M.; Bortoletto, D.; Cremaldi, L.; Cucciarelli, S.; Dorokhov, A.; Hormann, C.; Kim, D.; Konecki, M.; Kotlinski, D.; Prokofiev, K.; Regenfus, C.; Rohe, T.; Sanders, D.A.; Son, S.; Speer, T.

Book ID
114663694
Publisher
IEEE
Year
2005
Tongue
English
Weight
427 KB
Volume
52
Category
Article
ISSN
0018-9499

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A method has been developed to measure the trapping time constants in irradiated materials with test beam data. The measurements have been performed on ATLAS Pixel detectors irradiated with protons to a fluence of 1:1 Γ‚ 10 15 n eq cm Γ€2 : Different defect annealing scenarios have been investigated.