Measurement of trapping time constants in irradiated DOFZ silicon with test beam data

✍ Scribed by T. Lari

• Book ID: 103852674
• Publisher: Elsevier Science
• Year: 2004
• Tongue: English
• Weight: 194 KB
• Volume: 518
• Category: Article
• ISSN: 0168-9002
• DOI: 10.1016/j.nima.2003.11.019

✦ Synopsis

A method has been developed to measure the trapping time constants in irradiated materials with test beam data. The measurements have been performed on ATLAS Pixel detectors irradiated with protons to a fluence of 1:1 Â 10 15 n eq cm À2 : Different defect annealing scenarios have been investigated. The trapping probability has been observed to be smaller after 25 h of annealing at 60 C than after beneficial annealing only.