𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Simulation of focused ion beam etching by coupling a topography simulator and a Monte-Carlo sputtering yield simulator

✍ Scribed by D. Kunder; E. Baer; M. Sekowski; P. Pichler; M. Rommel

Publisher
Elsevier Science
Year
2010
Tongue
English
Weight
354 KB
Volume
87
Category
Article
ISSN
0167-9317

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

Investigation of ion beam sputtering pro
Investigation of ion beam sputtering process by Monte Carlo simulation
✍ Michio Mizutani; Kimihiro Sasaki; Tomonobu Hata πŸ“‚ Article πŸ“… 1998 πŸ› John Wiley and Sons 🌐 English βš– 547 KB

A simulation of ion beam sputtering for Si and Ge is carried out and the simulation results are compared with the experimental ones. By analyzing each process, the validity of the simulation is investigated. The simulation results include the sputtering yield, energy distribution, ejected angle dist