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Simulation of a solar cell based on InGaN

✍ Scribed by L.A. Vilbois; A. Cheknane; A. Bensaoula; C. Boney; T. Benouaz


Book ID
116426939
Publisher
Elsevier
Year
2012
Weight
780 KB
Volume
18
Category
Article
ISSN
1876-6102

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## Abstract Different conductive films are used as p‐GaN current spreading layers in order to explore photovoltaic action of InGaN/GaN double heterojunction solar cells. It is found that the devices with the 200‐nm thick indium‐tin oxide (ITO) transparent spreading layers shows a very small decreas