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Simulation, fabrication and characterization of a novel P-I-N-drain MOSFET structure for hot carrier suppression

✍ Scribed by Le-Tien Jung; Manna, I.; Banerjee, S.K.

Book ID: 114536151
Publisher: IEEE
Year: 1995
Tongue: English
Weight: 869 KB
Volume: 42
Category: Article
ISSN: 0018-9383
DOI: 10.1109/16.405272

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