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Simple mathematical model of shift of threshold voltage induced in an m.o.s. transistor by testing at elevated temperatures

✍ Scribed by Reynolds, F.H.

Book ID: 119746651
Publisher: Institution of Electrical Engineers
Year: 1972
Weight: 544 KB
Volume: 119
Category: Article
ISSN: 0020-3270
DOI: 10.1049/piee.1972.0335

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📜 SIMILAR VOLUMES

Simple mathematical model of shift of th

Simple mathematical model of shift of threshold voltage induced in an MOS transistor by testing at elevated temperatures : F. H. Reynolds. Proc. IEE 119, No. 12, December (1972), p. 1683

📂 Article 📅 1973 🏛 Elsevier Science 🌐 English ⚖ 110 KB

The response of the threshold voltages o

The response of the threshold voltages of the transistors in simple MOS circuits to tests at elevated temperatures : F. H. Reynolds, Proc. IEEE Reliab. Phys. Symp., Las Vegas, U.S.A. 31 March–2 April (1971)

📂 Article 📅 1971 🏛 Elsevier Science 🌐 English ⚖ 104 KB