✦ LIBER ✦

Simple improvement of the Lindner high-frequency MOS capacitance approximation

✍ Scribed by Fenske, F.

Publisher: John Wiley and Sons
Year: 1983
Tongue: English
Weight: 189 KB
Volume: 75
Category: Article
ISSN: 0031-8965
DOI: 10.1002/pssa.2210750251

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Inversion charge redistribution model of

Inversion charge redistribution model of the high-frequency MOS capacitance

✍ Arnold Berman; Donald R. Kerr 📂 Article 📅 1974 🏛 Elsevier Science 🌐 English ⚖ 507 KB

Improvement of oxide thickness determina

Improvement of oxide thickness determination on MOS structures using capacitance–voltage measurements at high frequencies

✍ L. Soliman; E. Duval; M. Benzohra; E. Lheurette; K. Ketata; M. Ketata 📂 Article 📅 2001 🏛 Elsevier Science 🌐 English ⚖ 111 KB

It is well known that capacitance-voltage (C2V) measurements provide a simple determination of oxide thickness, but with the scaling down of components the classical method is not appropriated any more. We have observed that for two devices with the same oxide thickness and different surfaces, the c

Analysis of electrical characteristics o

Analysis of electrical characteristics of Au/SiO2/n-Si (MOS) capacitors using the high–low frequency capacitance and conductance methods

✍ A. Tataroğlu; Ş. Altındal 📂 Article 📅 2008 🏛 Elsevier Science 🌐 English ⚖ 235 KB

A simple and accurate approximation to t

A simple and accurate approximation to the high-frequency characteristics of insulated-gate field-effect transistors

✍ J.A. van Nielen 📂 Article 📅 1969 🏛 Elsevier Science 🌐 English ⚖ 305 KB

Inversion charge redistribution model of

Inversion charge redistribution model of the high-frequency MOS capacitance : A. Berman and D. R. Kerr. Solid St. Electron.17, 735 (1974)

📂 Article 📅 1974 🏛 Elsevier Science 🌐 English ⚖ 128 KB