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Silver Schottky contacts to a-plane bulk ZnO

✍ Scribed by Kim, Hogyoung; Kim, Haeri; Kim, Dong-Wook

Book ID
121234053
Publisher
American Institute of Physics
Year
2010
Tongue
English
Weight
757 KB
Volume
108
Category
Article
ISSN
0021-8979

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## Abstract High resistivity (β‰₯1 kΞ© cm) hydrothermally grown single crystal ZnO wafers were modified by hydrogen implantation. The implantation has been performed with multiple energies in order to form a box‐like profile with a depth of 4 ΞΌm and two different concentrations of 8 Γ— 10^17^ H/cm^3^ a