Schottky contacts to hydrogen doped ZnO

✍ Scribed by Schifano, R. ;Monakhov, E. V. ;Christensen, J. S. ;Kuznetsov, A. Yu. ;Svensson, B. G.

• Book ID: 105365146
• Publisher: John Wiley and Sons
• Year: 2008
• Tongue: English
• Weight: 703 KB
• Volume: 205
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.200878862

✦ Synopsis

Abstract

High resistivity (≥1 kΩ cm) hydrothermally grown single crystal ZnO wafers were modified by hydrogen implantation. The implantation has been performed with multiple energies in order to form a box‐like profile with a depth of 4 μm and two different concentrations of 8 × 10^17^ H/cm^3^ and 1.5 × 10^18^ H/ cm^3^. A subsequent annealing at 200 °C for 30 min in N~2~ resulted in the formation of a highly conductive layer. Pd con‐ tacts deposited on the implanted side showed rectifying behaviour by up to three orders of magnitude. However by capacitance vs. voltage (C –V) technique a carrier concentration significantly lower than the one expected according to the implanted H content was measured suggesting the presence of a high density of compensating centers and/or an incomplete activation of H as a donor. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)