Patterned germanium tunnel junctions for
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P.K Chiang; M.L Timmons; J.A Hutchby
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Article
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1987
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Elsevier Science
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The growth and characterization of germanium interconnects is described in this paper. Resistivity measurements indicate that n+-GaAs/p +-Ge/p+-GaAs structures may be the most viable interconnect yet reported for monolithic cascade cells. Specific interface resistivities as low as 1 Γ 10 -4 ~2 cm 2