✦ LIBER ✦

Effect of GaAs interfacial layer on the performance of high bandgap tunnel junctions for multijunction solar cells

✍ Scribed by Samberg, Joshua P.; Zachary Carlin, C.; Bradshaw, Geoff K.; Colter, Peter C.; Harmon, Jeffrey L.; Allen, J. B.; Hauser, John R.; Bedair, S. M.

Book ID: 121465772
Publisher: American Institute of Physics
Year: 2013
Tongue: English
Weight: 833 KB
Volume: 103
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.4819917

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Effect of anodic-oxide layer thickness o

Effect of anodic-oxide layer thickness on the performance of GaAs MOS solar cells

✍ Mathur, P.C.; Arora, J.D.; Hartnagel, H.L. 📂 Article 📅 1981 🏛 IEEE 🌐 English ⚖ 323 KB

The effects of trap-induced lifetime var

The effects of trap-induced lifetime variations on the design and performance of high-efficiency GaAs solar cells

✍ Ringel, S.A.; Rohatgi, A. 📂 Article 📅 1991 🏛 IEEE 🌐 English ⚖ 838 KB

Effect of the n/p tunnel junction on the

Effect of the n/p tunnel junction on the performance of a-Si:H/a-Si:H/μc-Si:H triple-junction solar cells

✍ X.X. Zheng; X.D. Zhang; S.S. Yang; S.Z. Xu; C.C. Wei; Y. Zhao 📂 Article 📅 2012 🏛 Elsevier Science 🌐 English ⚖ 395 KB

Effect of an insulating interfacial laye

Effect of an insulating interfacial layer at the metal (or TCO)/semiconductor front contact on the performance of a-Si:H solar cells

✍ M. Debnath; P. Chatterjee 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 598 KB

Photoresponse properties of BaSi2 epitax

Photoresponse properties of BaSi2 epitaxial films grown on the tunnel junction for high-efficiency thin-film solar cells

✍ Takashi Suemasu; Takanobu Saito; Katsuaki Toh; Atsushi Okada; Muhammad Ajmal Kha 📂 Article 📅 2011 🏛 Elsevier Science 🌐 English ⚖ 704 KB

[IEEE Record of the Twenty Third IEEE Ph

[IEEE Record of the Twenty Third IEEE Photovoltaic Specialists Conference - 1993 (Cat. No.93CH3283-9) - Louisville, KY, USA (10-14 May 1993)] Conference Record of the Twenty Third IEEE Photovoltaic Specialists Conference - 1993 (Cat. No.93CH3283-9) - Very high peak current CBE grown InGaAs tunnel junction for InP/InGaAs tandem cells fabricated on InP, GaAs, and Si substrates

✍ Freundlich, A.; Vilela, M.F.; Bensaoula, A.; Medelci, N. 📂 Article 📅 1993 🏛 IEEE ⚖ 408 KB