Silicon-on-insulator and SiGe waveguide photodetectors with Ge/Si self-assembled islands

✍ Scribed by M. El Kurdi; P. Boucaud; S. Sauvage; G. Fishman; O. Kermarrec; Y. Campidelli; D. Bensahel; G. Saint-Girons; G. Patriarche; I. Sagnes

• Book ID: 104428237
• Publisher: Elsevier Science
• Year: 2003
• Tongue: English
• Weight: 192 KB
• Volume: 16
• Category: Article
• ISSN: 1386-9477
• DOI: 10.1016/s1386-9477(02)00633-1

✦ Synopsis

We have investigated near infrared p-i-n waveguide photodetectors with Ge/Si self-assembled islands as optical active region. Two samples with Ge islands grown by high-pressure chemical vapor deposition were studied. The ÿrst sample consists of a p-i-n junction with islands embedded in a silicon-on-insulator waveguide. The second sample consists of a p-i-n junction with Ge island layers embedded in a Si0:98Ge0:02 alloy waveguide. The spectral responsivity of the detectors was measured with a broad-band source and with semiconductor laser diodes. At room temperature both samples exhibit similar responsivities at 0 V applied bias, with 55 (25) mA=W at 1:3 m and 0.15 (0:25) mA=W at 1:55 m for the Si0:98Ge0:02 alloy (silicon-on-insulator) waveguide. The photocurrent results are correlated to the interband absorption and to the photoluminescence of the islands.