Silicon-molecular beam epitaxy. volume 1
β Scribed by Bean, John Condon; Kasper, Erich
- Publisher
- CRC Press
- Year
- 2018
- Tongue
- English
- Leaves
- 255
- Category
- Library
No coin nor oath required. For personal study only.
β¦ Table of Contents
Content: 1. Introduction 2. Si-MBE Growth Systems Technology and Practice 3. Homoepitaxy 4. Models of Silicon Growth and Dopant Incorporation 5. Insulator over Silicon Structures 6. Growth Insulators on Si by MBE 7. Device Application: Work to Date 8. Device Application- Possibilities
β¦ Subjects
Molecular beam epitaxy;Silicon;SCIENCE / Physics / Electricity;SCIENCE / Physics / Electromagnetism
π SIMILAR VOLUMES
<p>This multi-contributor handbook discusses Molecular Beam Epitaxy (MBE), an epitaxial deposition technique which involves laying down layers of materials with atomic thicknesses on to substrates. It summarizes MBE research and application in epitaxial growth with close discussion and a 'how to' on
<p>The NATO Advanced Study Institute on "Molecular Beam Epitaxy (MBE) and Heterostructures" was held at the Ettore Majorana Center for Scientific Culture, Erice, Italy, on March 7-19, 1983, the second course of the International School of Solid-State Device ReΒ search. This volume contains the lectu