Molecular Beam Epitaxy

✍ Scribed by Brian R. Pamplin (Eds.)

Publisher: Pergamon Press
Year: 1980
Tongue: English
Leaves: 174
Edition: 1st
Category: Library

No coin nor oath required. For personal study only.

✦ Table of Contents

Content:
Inside Front Cover, Page ii
Front Matter, Page iii
Copyright, Page iv
INTRODUCTION, Pages 1-2, Brian R. Pamplin
SEMICONDUCTOR SUPERLATTICES BY MBE AND THEIR CHARACTERIZATION, Pages 3-14, L.L. Chang, L. Esaki
DESIGN CONSIDERATIONS FOR MOLECULAR BEAM EPITAXY SYSTEMS, Pages 15-32, P.E. Luscher, D.M. Collins
NONSTOICHIOMETRY AND CARRIER CONCENTRATION CONTROL IN MBE OF COMPOUND SEMICONDUCTORS, Pages 33-47, Donald L. Smith
MBE TECHNIQUES FOR IV-VI OPTOELECTRONIC DEVICES, Pages 49-94, H. Holloway, J.N. Walpole
INTEGRATED OPTICAL DEVICES FABRICATED BY MBE, Pages 95-113, R.D. Burnham, D.R. Scifres
SEMICONDUCTOR SURFACE AND CRYSTAL PHYSICS STUDIED BY MBE, Pages 115-144, R.Z. Bachrach
PERIODIC DOPING STRUCTURE IN GaAs, Pages 145-168, G.H. Döhler, K. Ploog
SUBJECT INDEX, Pages 169-171
COMPOUND INDEX, Pages 173-174

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