Silicon interstitials generation during the exposure of silicon to hydrogen plasma
β Scribed by R. Tonini; A. Monelli; F. Corni; S. Frabboni; G. Ottaviani; G. Queirolo
- Publisher
- Elsevier Science
- Year
- 1996
- Tongue
- English
- Weight
- 356 KB
- Volume
- 36
- Category
- Article
- ISSN
- 0921-5107
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Transmission electron microscopy (TEM) and atomic force microscopy (AFM) are used to study the temperature evolution of hydrogen plasma induced defects in silicon. Hydrogen plasma treated n-and p-doped Czochralski silicon samples were annealed at temperatures between 200 and 1000 Β°C for up to 10 h i
The use of porous silicon as an energy carrier is investigated. NaOH and solid Mg alloy are used to introduce OH Γ in water to react with the porous silicon and the porous silicon treated with Mg alloy in water is converted to transparent silicon oxide hydride. The amount and release rate of hydroge