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Dislocation generation during the precipitation of oxygen in silicon

✍ Scribed by Reiche, M.


Publisher
John Wiley and Sons
Year
1993
Tongue
English
Weight
484 KB
Volume
138
Category
Article
ISSN
0031-8965

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## Abstract Generation of dislocations during the growth of oxygen precipitates has been used as an alternative way of introduction of dislocation‐related luminescence centers. For this purpose a multistep annealing of Cz Si samples with different initial concentrations of oxygen has been carried o