This informative, new resource presents the first comprehensive treatment of silicon-germanium heterojunction bipolar transistors (SiGe HBTs). It offers you a complete, from-the-ground-up understanding of SiGe HBT devices and technology, from a very broad perspective. The book covers motivation, his
Silicon-Germanium Heterojunction Bipolar Transistors
โ Scribed by John D. Cressler
- Publisher
- Artech Print on Demand
- Year
- 2002
- Tongue
- English
- Leaves
- 589
- Edition
- 1st edition
- Category
- Library
No coin nor oath required. For personal study only.
โฆ Synopsis
textbook for a graduate or advanced undergraduate course in electrical or computer engineering and a reference for engineers working on technology relating to the two elements or for technical and non-technical workers in the semiconductor industry with some modest background in semiconductors and bipolar devices. It explores the practical applications over the past decade of the idea of combining the semiconductor silicon and the semiconductor germanium in transistor engineering.
๐ SIMILAR VOLUMES
SiGe HBTs is a hot topic within the microelectronics community because of its applications potential within integrated circuits operating at radio frequencies. Applications range from high speed optical networking to wireless communication devices.The addition of germanium to silicon technologies to
A highly comprehensive summary on circuit related modeling techniques and parameter extraction methods for heterojunction bipolar transistors<br /><br />โข Heterojunction Bipolar Transistor (HBT) is one of the most important devices for microwave applications. The book details the accurate device mod
<p><p>Amorphous Silicon/Crystalline Silicon Solar Cells deals with some typical properties of heterojunction solar cells, such as their history, the properties and the challenges of the cells, some important measurement<b></b>tools, some simulation programs and a brief survey of the state of the art