This informative, new resource presents the first comprehensive treatment of silicon-germanium heterojunction bipolar transistors (SiGe HBTs). It offers you a complete, from-the-ground-up understanding of SiGe HBT devices and technology, from a very broad perspective. The book covers motivation, his
SiGe Heterojunction Bipolar Transistors
โ Scribed by Peter Ashburn
- Publisher
- Wiley
- Year
- 2003
- Tongue
- English
- Leaves
- 279
- Edition
- 1
- Category
- Library
No coin nor oath required. For personal study only.
โฆ Synopsis
SiGe HBTs is a hot topic within the microelectronics community because of its applications potential within integrated circuits operating at radio frequencies. Applications range from high speed optical networking to wireless communication devices.The addition of germanium to silicon technologies to form silicon germanium (SiGe) devices has created a revolution in the semiconductor industry. These transistors form the enabling devices in a wide range of products for wireless and wired communications.
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textbook for a graduate or advanced undergraduate course in electrical or computer engineering and a reference for engineers working on technology relating to the two elements or for technical and non-technical workers in the semiconductor industry with some modest background in semiconductors and b
A highly comprehensive summary on circuit related modeling techniques and parameter extraction methods for heterojunction bipolar transistors<br /><br />โข Heterojunction Bipolar Transistor (HBT) is one of the most important devices for microwave applications. The book details the accurate device mod