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Silicon fusion bonding and its characterization

✍ Scribed by Harendt, C; Graf, H G; Hofflinger, B; Penteker, E


Book ID
121513776
Publisher
Institute of Physics
Year
1992
Tongue
English
Weight
294 KB
Volume
2
Category
Article
ISSN
0960-1317

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Rezorewstlve sdlcon-based pressure sensors have been fabncated which are capable of hlghpreclslon operation at temperatures as high as 250 "C These devices are fabncated by a umque &con fusion bonding process m which resistors from one wafer are bonded to the oxldlzed surface of a second wafer The m