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Silicon CMOS devices beyond scaling

โœ Scribed by Haensch, W.; Nowak, E. J.; Dennard, R. H.; Solomon, P. M.; Bryant, A.; Dokumaci, O. H.; Kumar, A.; Wang, X.; Johnson, J. B.; Fischetti, M. V.


Book ID
120606940
Publisher
IBM
Year
2006
Tongue
English
Weight
965 KB
Volume
50
Category
Article
ISSN
0018-8646

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๐Ÿ“œ SIMILAR VOLUMES


Scaling CMOS: Materials & devices
โœ G.A Brown; P.M Zeitzoff; G Bersuker; H.R Huff ๐Ÿ“‚ Article ๐Ÿ“… 2004 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 654 KB
Beyond CMOS: quantum devices
โœ J. Gautier ๐Ÿ“‚ Article ๐Ÿ“… 1997 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 719 KB

Due to its unrivaled properties, the MOSFET has become the dominant device species. However, in spite of its remarkable adaptability to the scale down evolution, it will have to face practical limits around 30mn gate length. Below that length, innovative devices, based on quantum mechanical effects,