Silicon Carbide: Recent Major Advances

✍ Scribed by F. Bechstedt, J. Furthmüller, U. Grossner, C. Raffy (auth.), Professor Dr. W. J. Choyke, Professor Dr. H. Matsunami, Dr. G. Pensl (eds.)

• Publisher: Springer-Verlag Berlin Heidelberg
• Year: 2004
• Tongue: English
• Leaves: 909
• Series: Advanced Texts in Physics
• Edition: 1
• Category: Library

✦ Synopsis

Since the 1997 publication of Silicon Carbide - A Review of Fundamental Questions and Applications to Current Device Technology edited by Choyke, et al., there has been impressive progress in both the fundamental and developmental aspects of the SiC field. So there is a growing need to update the scientific community on the important events in research and development since then. The editors have again gathered an outstanding team of the world's leading SiC researchers and design engineers to write on the most recent developments in SiC. The book is divided into five main categories: theory, crystal growth, characterization, processing and devices. Every attempt has been made to make the articles as up-to-date as possible and assure the highest standards of accuracy. As was the case for earlier SiC books, many of the articles will be relevant a decade from now so that this book will take its place next to the earlier work as a permanent and essential reference volume.

✦ Table of Contents

Front Matter....Pages I-XXXIV
Front Matter....Pages 1-1
Zero- and Two-Dimensional Native Defects....Pages 3-25
Defect Migration and Annealing Mechanisms....Pages 27-55
Hydrogen in SiC....Pages 57-88
Electronic Properties of Stacking Faults and Thin Cubic Inclusions in SiC Polytypes....Pages 89-118
Front Matter....Pages 119-119
Principles and Limitations of Numerical Simulation of SiC Boule Growth by Sublimation....Pages 121-135
Defect Formation and Reduction During Bulk SiC Growth....Pages 137-162
High Nitrogen Doping During Bulk Growth of SiC....Pages 163-178
Homoepitaxial and Heteroepitaxial Growth on Step-Free SiC Mesas....Pages 179-205
Low-Defect 3 C -SiC Grown on Undulant-Si (001) Substrates....Pages 207-228
New Development in Hot Wall Vapor Phase Epitaxial Growth of Silicon Carbide....Pages 229-250
Formation of SiC Thin Films by Ion Beam Synthesis....Pages 251-277
Front Matter....Pages 279-279
Atomic Structure of SiC Surfaces....Pages 281-316
The Continuum of Interface-Induced Gap States — The Unifying Concept of the Band Lineup at Semiconductor Interfaces — Application to Silicon Carbide....Pages 317-341
Contributions to the Density of Interface States in SiC MOS Structures....Pages 343-371
Properties of Nitrided Oxides on SiC....Pages 373-386
Hall Effect Studies of Electron Mobility and Trapping at the SiC/SiO 2 Interface....Pages 387-410
Front Matter....Pages 411-411
Optical Properties of SiC: 1997–2002....Pages 413-435
Cyclotron Resonance Studies of Effective Masses and Band Structure in SiC....Pages 437-460
Electronic Structure of Deep Defects in SiC....Pages 461-492
Phosphorus-Related Centers in SiC....Pages 493-515
Front Matter....Pages 411-411
Hall Scattering Factor for Electrons and Holes in SiC....Pages 517-536
Radiotracer Deep Level Transient Spectroscopy....Pages 537-561
Vacancy Defects Detected by Positron Annihilation....Pages 563-584
Characterization of Defects in SiC Crystals by Raman Scattering....Pages 585-605
Characterization of Low-Dimensional Structures in SiC Using Advanced Transmission Electron Microscopy....Pages 607-628
Synchrotron White Beam X-Ray Topography and High Resolution X-RayDiffraction Studies of Defects in SiC Substrates, Epilayers and Device Structures....Pages 629-648
Front Matter....Pages 649-649
Ohmic Contacts for Power Devices on SiC....Pages 651-669
Micromachining of SiC....Pages 671-698
Surface Preparation Techniques for SiC Wafers....Pages 699-710
Epitaxial Growth and Device Processing of SiC on Non-Basal Planes....Pages 711-733
Front Matter....Pages 735-735
SiC Power Bipolar Transistors and Thyristors....Pages 737-767
High Voltage SiC Devices....Pages 769-783
Power MOSFETs in 4 H -SiC: Device Design and Technology....Pages 785-811
Normally-Off Accumulation-Mode Epi-Channel Field Effect Transistor....Pages 813-837
Development of SiC Devices for Microwave and RF Power Amplifiers....Pages 839-868
Advances in SiC Field Effect Gas Sensors....Pages 869-896
Back Matter....Pages 897-899

✦ Subjects

Optical and Electronic Materials;Characterization and Evaluation of Materials;Surfaces and Interfaces, Thin Films;Condensed Matter Physics;Optics, Optoelectronics, Plasmonics and Optical Devices;Engineering, general