Advances in Silicon Carbide Processing and Applications

✍ Scribed by Stephen E. Saddow, Anant Agarwal

• Publisher: Artech House Inc
• Year: 2008
• Tongue: English
• Leaves: 218
• Series: Semiconductor Materials and Devices Series
• Category: Library

✦ Synopsis

Learn the latest advances in SiC (Silicon Carbide) technology from the leading experts in the field with this new cutting-edge resource. The book is your single source for in-depth information on both SiC device fabrication and system-level applications. This comprehensive reference begins with an examination of how SiC is grown and how defects in SiC growth can affect working devices.

Key issues in selective doping of SiC via ion implantation are covered with special focus on implant conditions and electrical activation of implants. SiC applications discussed include chemical sensors, motor-control components, high-temperature gas sensors, and high-temperature electronics. By cutting through the arcane data and jargon surrounding the hype on SiC, this book gives an honest assessment of today’s SiC technology and shows you how SiC can be adopted in developing tomorrow’s applications.

✦ Table of Contents

Team LiB......Page 0
Cover......Page 1
Contents......Page 5
Preface......Page 9
Acknowledgments......Page 10
1.1 General Properties......Page 11
1.2 History......Page 14
1.3 Crystalline Structure......Page 18
1.4 Crystal Growth......Page 21
1.5 Epitaxial Growth......Page 28
1.6 Defects......Page 31
1.7 Commercial Outlook......Page 32
1.8 Summary......Page 35
References......Page 36
2.1 Introduction......Page 38
2.2 Detection Mechanism of Field-Effect Gas Sensors......Page 39
2.3 Field-Effect Chemical Gas Sensor Devices......Page 47
2.4 Sensor Properties at Elevated Temperatures, Influence of Hydrogen......Page 58
2.5 More Sensor Properties......Page 62
2.6 Experimental......Page 66
2.7 Applications......Page 68
2.8 Outlook and Conclusions......Page 71
References......Page 72
3.1 DC-DC Conversion......Page 77
3.2 DC-AC Power Conversion......Page 88
3.3 Pulsed-Power Applications......Page 99
3.4 Thermal Management and High-Voltage Packaging......Page 105
References......Page 114
4.1 Introduction......Page 117
4.2 As-Implanted Profiles......Page 122
4.3 Implant Annealing......Page 136
4.4 Technology Barriers and Suggestions for Future Work......Page 155
References......Page 156
5.1 Introduction......Page 162
5.2 SiC UMOSFET......Page 163
5.3 SiC DIMOSFET......Page 170
5.4 SiC LDMOS......Page 176
5.5 Summary and Future Development......Page 178
References......Page 179
6.2 Device Structures and Operation of Power BJTs......Page 183
6.3 Design of the Epitaxial Power BJT......Page 187
6.4 Process Integration......Page 192
6.5 1.2-kV Power BJTs......Page 194
6.6 Design and Fabrication of UHF Transistors......Page 198
6.7 Future Work......Page 205
References......Page 206
About the Editors......Page 208
Index......Page 210

✦ Subjects

Приборостроение;Полупроводниковые приборы;