Advances in Silicon Carbide Processing and Applications (Semiconductor Materials and Devices Series)

✍ Scribed by Stephen E. Saddow, Anant Agarwal

• Publisher: Artech House Publishers
• Year: 2004
• Tongue: English
• Leaves: 228
• Category: Library

✦ Synopsis

Today sensors are found in everything from consumer goods such as cars and washing machines, to specialized hi-tech equipment used in medicine, aeronautics, and defense. Silicon carbide (SiC) is the material that is revolutionizing sensor technology and driving its use in a multitude of applications. This book is a comprehensive look at this cutting-edge technology and examines the application of SiC sensors in a broad cross section of industries. Leading experts explain the latest advances in manufacturing SiC materials and devices as well as their applications. Researchers and professional engineers alike can find the solutions they need to design and develop SiC sensors. Case studies show how to use innovative SiC technology to provide practical applications and products for industry.

✦ Table of Contents

Cover......Page 1
Contents......Page 8
Preface......Page 12
Acknowledgments......Page 14
1.1 General Properties......Page 16
1.2 History......Page 19
1.3 Crystalline Structure......Page 23
1.4 Crystal Growth......Page 26
1.5 Epitaxial Growth......Page 33
1.6 Defects......Page 36
1.7 Commercial Outlook......Page 37
1.8 Summary......Page 40
References......Page 41
2.1 Introduction......Page 44
2.2 Detection Mechanism of Field-Effect Gas Sensors......Page 45
2.3 Field-Effect Chemical Gas Sensor Devices......Page 53
2.4 Sensor Properties at Elevated Temperatures, Influence of Hydrogen......Page 64
2.5 More Sensor Properties......Page 68
2.6 Experimental......Page 72
2.7 Applications......Page 74
2.8 Outlook and Conclusions......Page 77
References......Page 78
3.1 DC-DC Conversion......Page 84
3.2 DC-AC Power Conversion......Page 95
3.3 Pulsed-Power Applications......Page 106
3.4 Thermal Management and High-Voltage Packaging......Page 112
References......Page 121
4.1 Introduction......Page 124
4.2 As-Implanted Profiles......Page 129
4.3 Implant Annealing......Page 143
4.4 Technology Barriers and Suggestions for Future Work......Page 162
References......Page 163
5.1 Introduction......Page 170
5.2 SiC UMOSFET......Page 171
5.3 SiC DIMOSFET......Page 178
5.4 SiC LDMOS......Page 184
5.5 Summary and Future Development......Page 186
References......Page 187
6.2 Device Structures and Operation of Power BJTs......Page 192
6.3 Design of the Epitaxial Power BJT......Page 196
6.4 Process Integration......Page 201
6.5 1.2-kV Power BJTs......Page 203
6.6 Design and Fabrication of UHF Transistors......Page 207
6.7 Future Work......Page 214
References......Page 215
About the Editors......Page 218
Index......Page 220