Silicon-based tunneling field-effect transistor with elevated germanium source formed on (110) silicon substrate

✍ Scribed by Han, Genquan; Guo, Pengfei; Yang, Yue; Zhan, Chunlei; Zhou, Qian; Yeo, Yee-Chia

• Book ID: 115493383
• Publisher: American Institute of Physics
• Year: 2011
• Tongue: English
• Weight: 435 KB
• Volume: 98
• Category: Article
• ISSN: 0003-6951
• DOI: 10.1063/1.3579242