Device physics and guiding principles for the design of double-gate tunneling field effect transistor with silicon-germanium source heterojunction

✍ Scribed by Toh, Eng Huat (author);Wang, Grace Huiqi (author);Chan, Lap (author);Samudra, Ganesh (author);Yeo, Yee Chia (author)

• Book ID: 115494157
• Publisher: American Institute of Physics
• Year: 2007
• Tongue: English
• Weight: 665 KB
• Volume: 91
• Category: Article
• ISSN: 0003-6951
• DOI: 10.1063/1.2823606