Significantly decreased production times for a-Si/µc-Si tandem cells on texture-etched ZnO:Al

✍ Scribed by Gordijn, A. ;Schicho, S. ;Muthmann, S. ;Kilper, T. ;Zhu, H. ;Bunte, E. ;Hüpkes, J.

• Book ID: 105365712
• Publisher: John Wiley and Sons
• Year: 2010
• Tongue: English
• Weight: 260 KB
• Volume: 207
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.200982743

✦ Synopsis

Abstract

Several approaches that lead to shorter production times of a‐Si/µc‐Si tandem cells are combined in this paper: high‐rate sputtering of aluminum‐doped zinc oxide, high‐rate 40 MHz plasma deposition of microcrystalline silicon and reduced i‐layer thicknesses. On standard lab‐type texture‐etched ZnO:Al, 1 cm^2^ a‐Si:H/µc‐Si:H tandem test cells on a deposition area of 30 × 30 cm^2^ were made that showed an initial efficiency of 9.9%, whereas the total effective deposition time of intrinsic layers was only 22 min (15 min for the top cell and 7 min for the bottom cell). The silicon thickness is only 600 nm. On high‐rate texture‐etched ZnO:Al an efficiency of 9.4% initial was reached. Standard light‐induced degradation experiments showed a degradation rate of only 5.5–7.9% after 1000 h. This regime of very short preparation times and relatively high‐stabilized efficiencies is highly interesting from the production point‐of‐view.