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SiGe Epitaxy - the key to the device market part II

✍ Scribed by Roy Szweda


Publisher
Elsevier Science
Year
2002
Tongue
English
Weight
460 KB
Volume
15
Category
Article
ISSN
0961-1290

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✦ Synopsis


Two issues ago TFR turned its attention to the use of epitaxy for the production of silicon-germanium (SiGe) devices. Since then there have been some very important further developments. These include the commercial launch of the First of the next-generation of production CVD systems For SiGe From Roy Szweda, Therm0 VG Semicon, the EpiStar CV200. The Associate Editor SiGe CVD market was until recently split between ASM, Unaxis and Applied Materials. These are principally silicon equipment manufacturers but Unaxis will be Familiar to readers of this magazine for its Ill-V etch and deposition equipment. However, the newest entrants to the field will be very Familiar From their III-V epitaxy systems. SiGe Epitaxythe Key to the Device Market Part II As we covered last time,Aixtron AG, one of the world's leading MOCVD equipment makers has launched its Tricent range of silicon CVD systems. Most recent, however, is one of the leaders in the corresponding MBE Beld,Thermo VG SemiconThe involvement of such prestigious companies could be the latest in a trend for compounds-oriented companies to add Group IV materials processing to their portfolio. Other examples include IQE plc which has, as reported here, sealed several partnerships with silicon companies and set up its own Silicon Compounds division.


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