Two issues ago TFR turned its attention to the use of epitaxy for the production of silicon-germanium (SiGe) devices. Since then there have been some very important further developments. These include the commercial launch of the First of the next-generation of production CVD systems For SiGe From R
β¦ LIBER β¦
SiGe epitaxy - the key to the device market
β Scribed by Roy Szweda
- Publisher
- Elsevier Science
- Year
- 2002
- Tongue
- English
- Weight
- 707 KB
- Volume
- 15
- Category
- Article
- ISSN
- 0961-1290
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