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SiGe double barrier resonant tunneling diodes on bulk SiGe substrates with high peak-to-valley current ratio

✍ Scribed by Tsujino, S.; Usami, N.; Weber, A.; Mussler, G.; Shushunova, V.; Grützmacher, D.; Azuma, Y.; Nakajima, K.

No coin nor oath required. For personal study only.

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