This second of two volumes reviews four important additional areas: the growth of SiC substrates; the deep defects in different SiC polytypes, which after many years of research still define the properties of bulk SiC and the performance and reliability of SiC devices; recent work on SiC JFETs; and
SiC materials and devices. / Volume 2
β Scribed by Michael Shur; Sergey L Rumyantsev; M E LevinshteiΜn
- Publisher
- World Scientific
- Year
- 2007
- Tongue
- English
- Leaves
- 143
- Series
- Selected topics in electronics and systems, v. 43
- Category
- Library
No coin nor oath required. For personal study only.
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