In this work, we present the characterization results for several HEMT GaNbased devices developed by SELEX Sistemi Integrati. Due to the wide band-gap properties of this material, these devices are very well-suited for high-power applications, and must be characterized under strongly nonlinear and h
β¦ LIBER β¦
SiC and GaN transistors - is there one winner for microwave power applications?
β Scribed by Trew, R.J.
- Book ID
- 118694497
- Publisher
- IEEE
- Year
- 2002
- Tongue
- English
- Weight
- 464 KB
- Volume
- 90
- Category
- Article
- ISSN
- 0018-9219
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