Si (111) substrates as highly effective pseudomasks for selective growth of GaN material and devices by ammonia-molecular-beam epitaxy

✍ Scribed by Tang, H.; Haffouz, S.; Bardwell, J. A.

• Book ID: 121816519
• Publisher: American Institute of Physics
• Year: 2006
• Tongue: English
• Weight: 510 KB
• Volume: 88
• Category: Article
• ISSN: 0003-6951
• DOI: 10.1063/1.2199457