Sheath dynamics in plasma immersion ion implantation
✍ Scribed by R. Günzel; J. Brutscher
- Publisher
- Elsevier Science
- Year
- 1996
- Tongue
- English
- Weight
- 694 KB
- Volume
- 85
- Category
- Article
- ISSN
- 0257-8972
No coin nor oath required. For personal study only.
📜 SIMILAR VOLUMES
Nitrogen plasma immersion ion implantation (PIII) was applied to Pebax thin films and plates using doses ranging from 5 • 10 14 to 10 17 ions/cm 2 at applied voltages of 5, 10, 20 and 30 kV. The analysis of the Pebax structure after implantation was performed using FTIR ATR, Raman, UV-vis transmissi
Plasma immersion ion implantation (PIII), using bias voltages of 5, 10, 15 and 20 kV in an argon plasma and fluences in the range of 2 Â 10 14 -2 Â 10 16 ions/cm 2 , was applied to 100 nm polystyrene films coated on silicon wafer substrates. The etching kinetics and structural changes induced in the