Evidence for interlayer donor–acceptor r
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K.S. Zhuravlev; D.A. Petrakov; A.M. Gilinsky; T.S. Shamirzaev; V.V. Preobrazhens
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Article
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2000
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Elsevier Science
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English
⚖ 160 KB
Steady-state and time-resolved photoluminescence of (GaAs) 7 (AlAs) 9 type II superlattices grown simultaneously by molecular beam epitaxy on (311)A and (100) GaAs substrates, intentionally undoped or uniformly doped with silicon, has been studied. It is shown that at temperatures T > 30 K, the domi