Application of capacitance-voltage measu
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Okamura, Koshi ;Nikolova, Donna ;Mechau, Norman ;Hahn, Horst
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Article
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2010
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John Wiley and Sons
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English
β 383 KB
## Abstract Solutionβprocessed inorganic fieldβeffect transistors (FETs) are mostly composed of nanocrystalline semiconductors as active layers. Since carriers are induced at the interface between the nanocrystalline semiconductor and the dielectric, the roughness at the interface has a significant