A low-temperature micro-photoluminescence (m-PL) investigation of InAs/GaAs quantum dots (QDs) exposed to a lateral external electric field is reported. It is demonstrated that the QDs PL signal could be increased several times by altering the external and/or the internal electric field. The interna
✦ LIBER ✦
Sharp exciton emission from single InAs quantum dots in GaAs nanowires
✍ Scribed by Panev, Nikolay; Persson, Ann I.; SkoÌld, Niklas; Samuelson, Lars
- Book ID
- 121511395
- Publisher
- American Institute of Physics
- Year
- 2003
- Tongue
- English
- Weight
- 437 KB
- Volume
- 83
- Category
- Article
- ISSN
- 0003-6951
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