Shallow p+n junction silicon nuclear radiation detectors

✍ Scribed by J. Dobrovodský; I. Bešše'; L. Hrubčín; P. Kováč

• Publisher: Elsevier Science
• Year: 1994
• Tongue: English
• Weight: 333 KB
• Volume: 42
• Category: Article
• ISSN: 0924-4247
• DOI: 10.1016/0924-4247(94)80053-7

✦ Synopsis

Si planar technology and ton unplantatlon were used for manufacturmg shallow p+n lunctlon nuclear rachatlon detectors Theu charactenstics were mvestlgated as a function of alternatwe unplantation steps mtb and v&out preamorphlsatlon by Si (SifB, Sl+BF,, B, BF,) The influence of Ar lmplantatlon on the Increase of the breakdown voltage was exammed The tluckness of the msensltwe entrance wmdow (dead layer) was determmed by the tlltmg method A descnptlon of the detector manufacturmg process, and results of the measured detector performance (currenthroltage charactenshcs, detector resolution, dead wmdow thickness) IS presented and discussed