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Shallow junctions in p-In.53Ga.47As by ion implantation

✍ Scribed by M.N. Blanco; E. Redondo; C. León; J. Santamarı́a; G. González-Dı́az


Book ID
114170577
Publisher
Elsevier Science
Year
1999
Tongue
English
Weight
153 KB
Volume
147
Category
Article
ISSN
0168-583X

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Ion-implantation issues in the formation
✍ E. Simoen; A. Satta; A. D’Amore; T. Janssens; T. Clarysse; K. Martens; B. De Jae 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 361 KB

This paper provides an overview of the current state-of-the-art in the formation of shallow junctions in germanium by ion implantation, covering the issues of dopant activation, diffusion and defect removal. As will be shown, for the case of p + implantations, the application of rapid thermal anneal