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On the activation of implanted silicon ions in p -In 0.53 Ga 0.47 As

✍ Scribed by Djara, V; Cherkaoui, K; Newcomb, S B; Thomas, K; Pelucchi, E; O'Connell, D; Floyd, L; Dimastrodonato, V; Mereni, L O; Hurley, P K

No coin nor oath required. For personal study only.

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