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Shallow donor levels of silicon in a high magnetic field and magnetic degeneracy at 355 kOe

โœ Scribed by S.M. Dickmann; D.I. Sidel'nikov


Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
291 KB
Volume
187
Category
Article
ISSN
0375-9601

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Effects of applied magnetic field on the
โœ Mohammad El-Said ๐Ÿ“‚ Article ๐Ÿ“… 1994 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 239 KB

The effects of an applied magnetic field of arbitrary strength on shallow donor impurity states in a parabolic quantum dot are theoretically studied. The shifted 1/N-expansion method is used to solve the impurity effective-mass Hamiltonian. The transition energies between the impurity ground and the