๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Shallow acceptors and p-type ZnSe

โœ Scribed by K. Kosai; B. J. Fitzpatrick; H. G. Grimmeiss; R. N. Bhargava; G. F. Neumark


Book ID
121833160
Publisher
American Institute of Physics
Year
1979
Tongue
English
Weight
395 KB
Volume
35
Category
Article
ISSN
0003-6951

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


Shallow acceptor complexes in p-type ZnO
โœ Reynolds, J. G.; Reynolds, C. L.; Mohanta, A.; Muth, J. F.; Rowe, J. E.; Everitt ๐Ÿ“‚ Article ๐Ÿ“… 2013 ๐Ÿ› American Institute of Physics ๐ŸŒ English โš– 916 KB
ZnSe-based laser diodes and p-type dopin
โœ K. Ohkawa; A. Tsujimura; S. Hayashi; S. Yoshii; T. Mitsuyu ๐Ÿ“‚ Article ๐Ÿ“… 1993 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 466 KB

## Highly conductive p-type ZnSe layers have been grown by molecular beam epitaxy with nitrogen radical doping. Active nitrogens responsible for doping are N, metastables in the A3C: state. The free-hole concentration of N-doped ZnSe is of the order of 10" cm-j at room temperature. Laser diode ac